Datasheet
May 2014
©2012 Fairchild Semiconductor Corporation
FDMA7672 Rev.C7
www.fairchildsemi.com
1
FDMA7672 Single N-Channel Power Trench
®
MOSFET
FDMA7672
Single N-Channel PowerTrench
®
MOSFET
30 V, 9 A, 21 mΩ
Features
Max r
DS(on)
= 21 mΩ at V
GS
= 10 V, I
D
= 9 A
Max r
DS(on)
= 32 mΩ at V
GS
= 4.5 V, I
D
= 7 A
Low Profile - 0.8 mm
maximum - in the new package
MicroF
ET 2x2 mm
Free from halogenated compounds and antimony oxides
RoHS compliant
General Description
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low r
DS(on)
and gate charge provide excellent switching
performance.
Application
DC – DC Buck Converters
D
D
S
G
D
D
Pin 1
Drain
Source
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D
D
D
D
S
G
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 30 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
A
= 25 °C (Note 1a) 9
A
-Pulsed 24
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 2.4
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 6.9
°C/WR
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 52
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 145
Device Marking Device Package Reel Size Tape Width Quantity
672 FDMA7672 MicroFET 2x2 7 ’’ 8 mm 3000 units