Datasheet

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FDMA905P Rev.C2

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FDMA905P Single P-Channel PowerTrench

MOSFET

June 2014

FDMA905P

Single P-Channel PowerTrench

MOSFET

-12 V, -10 A, 16 mΩ

Features

 Max r

DS(on)

= 16 mΩ at V

= -4.5 V, I

= -10 A

 Max r

DS(on)

= 21 mΩ at V

= -2.5 V, I

= -8.9 A

 Max r

DS(on)

= 82 mΩ at V

= -1.8 V, I

= -4.5 A

 Low profile - 0.8 mm maximum - in the new package

MicroFET 2X2 mm

 Free from halogenated compounds and antimony oxides

 RoHS Compliant

General Description

This device is designed specifically for battery charge or load

switching in cellular handset and other ultraportable

applications. It features a MOSFET with low on-state resistance.

The MicroFET 2X2 package offers exceptional thermal

performance for its physical size and is well suited to linear mode

applications.

Bottom Drain Contact

Pin 1

Drain

Source

MicroFET 2X2 (Bottom View)

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -12 V

Gate to Source Voltage ±8 V

Drain Current -Continuous (Note 1a) -10

-Pulsed -40

Power Dissipation (Note 1a) 2.4

Power Dissipation (Note 1b) 0.9

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 6.9

°C/WR

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 52

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 145

Device Marking Device Package Reel Size Tape Width Quantity

A95 FDMA905P MicroFET 2X2 7 ’’ 8 mm 3000 units

Summary of content (6 pages)

PAGE 1
FDMA905P Single P-Channel PowerTrench® MOSFET -12 V, -10 A, 16 mΩ Features General Description Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.0 V -12 V -4.
PAGE 3
40 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5 V -ID, DRAIN CURRENT (A) VGS = -3 V 30 VGS = -2.5 V VGS = -1.8 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 VGS = -1.8 V 1.5 1.0 0.5 0 10 30 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 60 ID = -10 A VGS = -4.5 V rDS(on), DRAIN TO 1.2 1.0 0.8 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) Figure 1.
PAGE 4
10000 ID = -10 A Ciss VDD = -5 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -6 V VDD = -7 V 1.5 Coss 1000 Crss f = 1 MHz VGS = 0 V 0 0 5 10 15 20 100 0.1 25 1 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 100 100 10 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1 ms 10 ms 1 THIS AREA IS LIMITED BY rDS(on) 0.
PAGE 5
FDMA905P Single P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.