Datasheet

April 2014
FDMB3800N Dual N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMB3800N Rev.C5
www.fairchildsemi.com
1
FDMB3800N
Dual N-Channel PowerTrench
®
MOSFET
30V, 4.8A, 40mΩ
Features
 Max r
DS(on)
= 40mΩ at V
GS
= 10V, I
D
= 4.8A
 Max r
DS(on)
= 51mΩ at V
GS
= 4.5V, I
D
= 4.3A
 Fast switching speed
 Low gate Charge
 High performance trench technology for extremely low r
DS(on)
 High power and current handling capability.
 RoHS Compliant
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
A
= 25°C (Note 1a) 4.8
A
-Pulsed 9
P
D
Power Dissipation T
A
= 25°C Note 1a) 1.6
W
Power Dissipation T
A
= 25°C (Note 1b) 0.75
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 80
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 165
Device Marking Device Package Reel Size Tape Width Quantity
3800 FDMB3800N MicroFET3X1.9 7’’ 8mm 3000 units
MicroFET 3X1.9
8
1
7
2
3
4
6
5
Q2
Q1
D2
D2
D1
D1
G2
G1
S1
S2