Datasheet

December 2013
FDMC15N06 — N-Channel UltraFET Power MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC15N06 Rev. C1
www.fairchildsemi.com
1
FDMC15N06
N-Channel UltraFET Power MOSFET
55 V, 15 A, 90 mΩ
Features
•R
DS(on)
= 75 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 15 A
• 100% Avalanche Tested
• RoHS compliant
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technol-
ogy achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It
was designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDMC15N06 Unit
V
DSS
Drain to Source Voltage 55 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 15
A
- Continuous (T
C
= 100
o
C) 9
- Continuous (T
A
= 25
o
C) (Note 1a) 2.4 A
I
DM
Drain Current - Pulsed (Note 2) 60 A
E
AS
Single Pulsed Avalanche Energy (Note 3) 36 mJ
I
AR
Avalanche Current 15 A
E
AR
Repetitive Avalanche Energy 3.5 mJ
P
D
Power Dissipation
(T
C
= 25
o
C) 35 W
(T
A
= 25
o
C) 2.3 W
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDMC15N06 Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 3.5
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. (Note 1a) 53