Datasheet
FDMC2610 N-Channel UltraFET Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC2610 Rev.C2
www.fairchildsemi.com
1
FDMC2610
N-Channel UltraFET Trench
®
MOSFET
200V, 9.5A, 200mΩ
Features
Max r
DS(on)
= 200mΩ at V
GS
= 10V, I
D
= 2.2A
Max r
DS(on)
= 215mΩ at V
GS
= 6V, I
D
= 1.5A
Low Profile - 1mm max in a Power 33
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 200 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Silicon limited) T
C
= 25°C 9.5
A -Continuous T
A
= 25°C (Note 1a) 2.2
-Pulsed 15
P
D
Power Dissipation T
C
= 25°C 42
W
Power Dissipation T
A
= 25°C (Note 1a) 2.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
FDMC2610 FDMC2610 MLP 3.3x3.3
November 2012
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1
13 ’’ 12 mm 3000 units