Datasheet

tm
November 2012
FDMC2674 N-Channel UltraFET Trench MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC2674 Rev.F3
www.fairchildsemi.com
1
FDMC2674
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366mΩ
Features
 Max r
DS(on)
= 366mΩ at V
GS
= 10V, I
D
= 1.0A
 Typ Q
g
= 12.7nC at V
GS
= 10V
 Low Miller charge
 Low Q
rr
Body Diode
 Optimized efficiency at high frequencies
 UIS Capability ( Single Pulse and Repetitive Pulse)
 RoHS Compliant
General Description
UltraFET device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
 DC/DC converters and Off-Line UPS
 Distributed Power Architectures
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 220 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Silicon limited) T
C
= 25°C 7.0
A -Continuous T
A
= 25°C (Note 1b) 1.0
-Pulsed 13.8
E
AS
Single Pulse Avalanche Energy (Note 3) 11 mJ
P
D
Power Dissipation T
C
= 25°C 42
W
Power Dissipation T
A
= 25°C (Note 1a) 2.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 3.0
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
FDMC2674 FDMC2674 MLP 3.3X3.3 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
DD
D
D
G
S
S
S
Bottom
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MLP 3.3x3.3
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