Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC3020DC, MOSFET

FDMC3020DC N-Channel Dual Cool

PowerTrench

MOSFET

FDMC3020DC Rev.C4

www.fairchildsemi.com

July 2012

FDMC3020DC

N-Channel Dual Cool

PowerTrench

MOSFET

30 V, 40 A, 6.25 mΩ

Features

 Dual Cool

Top Side Cooling PQFN package

 Max r

DS(on)

= 6.25 mΩ at V

= 10 V, I

= 12 A

 Max r

DS(on)

= 9.0 mΩ at V

= 4.5 V, I

= 10 A

 High performance technology for extremely low r

DS(on)

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process.

Advancements in both silicon and Dual Cool

package

technologies have been combined to offer the lowest r

DS(on)

while maintaining excellent switching performance by extremely

low Junction-to-Ambient thermal resistance.

Applications

 Synchronous Rectifier for DC/DC Converters

 Telecom Secondary Side Rectification

 High End Server/Workstation

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 40

-Continuous (Silicon limited) T

= 25 °C 70

-Continuous T

= 25 °C (Note 1a) 17

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 60 mJ

dv/dt Peak Diode Recovery dv/dt (Note 4) 1.6 V/ns

Power Dissipation T

= 25 °C 50

Power Dissipation T

= 25 °C (Note 1a) 3.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Top Source) 7.9

°C/W

θJC

Thermal Resistance, Junction to Case (Bottom Drain) 2.5

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 42

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 105

θJA

Thermal Resistance, Junction to Ambient (Note 1i) 17

θJA

Thermal Resistance, Junction to Ambient (Note 1j) 26

θJA

Thermal Resistance, Junction to Ambient (Note 1k) 12

Device Marking Device Package Reel Size Tape Width Quantity

3020 FDMC3020DC Dual Cool

Power 33 13’’ 12 mm 3000 units

Top

Power 33

Bottom

Pin 1

Summary of content (8 pages)

PAGE 1
N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 40 A, 6.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 6.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IGSS Gate to Source Leakage Current IDSS Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V 30 ID = 250 μA, referenced to 25 °C V 17 VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V mV/°C 1 μA ±100 nA 3.
PAGE 3
RθJC Thermal Resistance, Junction to Case (Top Source) 7.9 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.
PAGE 4
50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS = 10V ID, DRAIN CURRENT (A) 40 VGS = 4.5V VGS = 3.5V 30 VGS = 4V 20 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 10 VGS = 3V 0 0 1 2 3 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 5 VGS = 3V 4 VGS = 3.5V 3 VGS = 4V 1 VGS = 10V 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.
PAGE 5
3000 ID = 12A Ciss 8 1000 VDD = 10V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 20V 4 Coss 100 f = 1MHz VGS = 0V 2 0 0 3 6 9 12 15 30 0.1 18 1 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) o 10 TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 60 VGS = 4.5 V 40 Limited by Package 20 0 25 100 RθJC = 2.5 C/W VGS = 10 V 50 75 100 Figure 9.
PAGE 6
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 105 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC3020DC Rev.C4 6 www.fairchildsemi.
PAGE 7
FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC3020DC Rev.C4 7 www.fairchildsemi.
PAGE 8
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.