Datasheet

October 2013
©2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C3
www.fairchildsemi.com
1
FDMC3612 N-Channel PowerTrench
®
MOSFET
FDMC3612
N-Channel Power Trench
®
MOSFET
100 V, 12 A, 110 mΩ
Features
 Max r
DS(on)
= 110 mΩ at V
GS
= 10 V, I
D
= 3.3 A
 Max r
DS(on)
= 122 mΩ at V
GS
= 6 V, I
D
= 3.0 A
 Low Profile - 1 mm max in Power 33
 100% UIL Tested
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
 DC - DC Conversion
 PSE Switch
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
DD
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 16
A
-Continuous (Silicon limited) T
C
= 25 °C 12
-Continuous T
A
= 25 °C (Note 1a) 3.3
-Pulsed 15
E
AS
Single Pulse Avalanche Energy (Note 3) 32 mJ
P
D
Power Dissipation T
C
= 25 °C 35
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to + 150 °C
R
θJC
Thermal Resistance, Junction to Case 3.5
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC3612 FDMC3612 Power 33 13’’ 12
mm 3000 units