Datasheet

June 2014
©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C8
www.fairchildsemi.com
1
FDMC510P P-Channel PowerTrench
®
MOSFET
FDMC510P
P-Channel PowerTrench
®
MOSFET
-20 V, -18 A, 8.0 mΩ
Features
 Max r
DS(on)
= 8.0 mΩ at V
GS
= -4.5 V, I
D
= -12 A
 Max r
DS(on)
= 9.8 mΩ at V
GS
= -2.5 V, I
D
= -10 A
 Max r
DS(on)
= 13 mΩ at V
GS
= -1.8 V, I
D
= -9.3 A
 Max r
DS(on)
= 17 mΩ at V
GS
= -1.5 V, I
D
= -8.3 A
 High performance trench technology for extr
emely low r
DS(on)
 High power and current handling capability in a widely used
su
rface mount package
 100% UIL Tested
 Termination is Lead-free and RoHS Compliant
 HBM ESD capability level >2 KV typical (Note 4)
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been optimized for r
DS(ON)
, switching performance and
ruggedness.
Applications
 Battery Management
 Load Switch
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -20 V
V
GS
Gate to Source Voltage ±8 V
I
D
Drain Current -Continuous T
C
= 25 °C -18
A -Continuous T
A
= 25 °C (Note 1a) -12
-Pulsed
-50
E
AS
Single Pulse Avalanche Energy 37 mJ
P
D
Power Dissipation T
C
= 25 °C 41
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC510P FDMC510P MLP 3.3X3.3 13 ’’ 12 mm 3000 units