Datasheet
FDMC5614P P-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semicond
uctor Corporation
FDMC5614P Rev.C2
www.fairchildsemi.com
1
FDMC5614P
P-Channel PowerTrench
®
MOSFET
-60V, -13.5A, 100mΩ
Features
Max r
DS(on)
= 10
0mΩ at V
GS
= -1
0V
, I
D
= -5.7A
Max r
DS(on)
= 135mΩ at V
GS
= -4.5V, I
D
= -4.4A
Low gate charge
Fast switching speed
High per
formance trench technology for extr
emely low r
DS(on)
High power and current handling capability
RoHS Co
mpliant
General Description
This P-Channel MOSFET is a rug
ged gate version of Fairchild
Semiconductor's advanced PowerTrench
®
process. It has been
optimized for
power management applications requiring a wide
range of gate drive voltage ratings (4.5V-20V).
Application
Power management
Load switch
Battery protection
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Charac
teristics
Package Marking and Ordering Information
Symbol Parameter R
atings Units
V
DS
Drain to Source Voltage -60 V
V
GS
Gate to Source Voltage ±
20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C -13.5
A
-Continuous (Silicon lim
ited) T
C
= 25°C -14
-Continuous T
A
= 25°C
(Note 1a) -5.7
-Pulsed -23
P
D
Power Dissipati
on T
C
= 25°C 42
W
Pow
er Dissipation T
A
= 25°C (
Note 1a) 2.1
T
J
, T
STG
Operating and Storage Junction Temperatu
re Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to C
ase 3.0
°C/W
R
θJA
Therm
al Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
5614P FDMC5614P Power 33 7’’ 8mm 3000 units
S
S
S
G
D
D
D
D
8
1
7
2
3
4
6
5
Pin 1
MLP 3.3x3.3
Bottom
D
D
D
D
S
S
S
G
Top
May 2014