Datasheet
June 2014
FDMC6675BZ P-Channel PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D5
www.fairchildsemi.com
1
FDMC6675BZ
P-Channel PowerTrench
®
MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max r
DS(on)
= 14.4 mΩ at V
GS
= -10 V, I
D
= -9.5 A
Max r
DS(on)
= 27.0 mΩ at V
GS
= -4.5 V, I
D
= -6.9 A
HBM ESD protection level of 8 kV typical(note 3)
Extended V
GSS
range (-25 V) for battery applications
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
and ESD protection.
Application
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
MLP 3.3x3.3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous T
C
= 25 °C -20
A -Continuous T
A
= 25 °C (Note 1a) -9.5
-Pulsed -32
P
D
Power Dissipation T
C
= 25 °C 36
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3.4
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC6675BZ FDMC6675BZ MLP 3.3X3.3 13 ’’ 12 mm 3000 units