Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC6890NZ, MOSFET

October 2006

FDMC6890NZ Dual N-Channel PowerTrench

MOSFET

FDMC6890NZ Rev.C

www.fairchildsemi.com

FDMC6890NZ

Dual N-Channel PowerTrench

MOSFET

20V, 4A, Q1:68mΩ, Q2:100mΩ

Features

Q1: N-Channel

 Max r

DS(on)

= 68mΩ at V

= 4.5V, I

= 4A

 Max r

DS(on)

= 100mΩ at V

= 2.5V, I

= 3A

Q2: N-Channel

 Max r

DS(on)

= 100mΩ at V

= 4.5V, I

= 4A

 Max r

DS(on)

= 150mΩ at V

= 2.5V, I

= 2A

 Low gate Charge

 RoHS Compliant

General Description

FDMC6890NZ is a compact single package solution for DC to

DC converters with excellent thermal and switching

characteristics. Inside the Power 33 package features two

N-channel MOSFETs with low on-state resistance and low gate

charge to maximize the power conversion and switching

efficiency. The Q1 switch also integrates gate protection from

unclamped voltage input.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 Units

Drain to Source Voltage 20 20 V

Gate to Source Voltage ±12 ±12 V

-Continuous 4

-Pulsed 10

Power Dissipation (Steady State) Q1 (Note 1a) 1.92

Power Dissipation (Steady State) Q2 1.78

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient Q1 (Note 1a) 65

°C/W

θJA

Thermal Resistance, Junction to Ambient Q2 70

Device Marking Device Package Reel Size Tape Width Quantity

6890N FDMC6890NZ Power 33 7inch 8mm 3000 units

D1/S2

G1 G2

Bottom

D1/S2

Power 33

Summary of content (11 pages)

PAGE 1
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET tm 20V, 4A, Q1:68mΩ, Q2:100mΩ Features General Description Q1: N-Channel FDMC6890NZ is a compact single package solution for DC to DC converters Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A with excellent thermal and switching characteristics. Inside the Power 33 package features two Max rDS(on) = 100mΩ at VGS = 2.
PAGE 2
Symbol Parameter Test Conditions Type Min Typ Max Units ID = 250µA, VGS = 0V Q1 Q2 20 20 ID = 250µA, referenced to 25°C Q1 Q2 Q1 Q2 1 1 µA ±10 ±100 µA nA 2 2 V Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V Q1 Q2 V 13 12 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, I
PAGE 3
Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 4A Q1 Q2 0.94 0.92 1.25 1.25 V trr Reverse Recovery Time Q1 Q2 18 17 27 26 ns Q1 Q2 9 10 14 15 nC IF = 4A, di/dt = 100A/s Qrr Reverse Recovery Charge Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material.
PAGE 4
12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) 3.0 VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 8 VGS = 2.5V 6 4 VGS = 1.8V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 ID = 4A VGS = 4.5V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On - Resistance vs Junction Temperature 2.0 VGS = 2.5V 1.5 VGS = 4.5V 1.0 0.
PAGE 5
400 4.0 VDD = 8V Ciss 3.5 3.0 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4.5 VDD = 10V 2.5 2.0 VDD = 12V 1.5 1.0 100 0.5 1.0 1.5 2.0 2.5 20 0.1 3.0 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 6 20 10 5 4 3 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Crss f = 1MHz VGS = 0V 0.5 0.0 0.0 Coss TJ = 25oC 2 TJ = 125oC 1 0.01 0.
PAGE 6
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.006 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDMC6890NZ Rev.C 6 www.fairchildsemi.
PAGE 7
3.0 10 8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 2.5V 6 4 2 VGS = 1.8V 0 0.0 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 4A VGS = 4.5V 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 PULSE DURATION = 80µs DUTY CYCLE = 0.
PAGE 8
400 4.0 VDD = 8V Ciss 3.5 3.0 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 4.5 VDD = 10V 2.5 2.0 VDD = 12V 1.5 1.0 100 Coss 0.5 0.0 0.0 0.4 0.8 1.2 1.6 20 0.1 2.0 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 6 20 10 5 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 20 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 3 TJ = 25oC 2 TJ = 125oC 100us 1 0.
PAGE 9
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -5 10 -4 10 -3 10 -2 -1 10 10 0 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 24. Transient Thermal Response Curve FDMC6890NZ Rev.C 9 www.fairchildsemi.
PAGE 10
FDMC6890NZ Dual N-Channel PowerTrench® MOSFET www.fairchildsemi.com 10 FDMC6890NZ Rev.
PAGE 11
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