Datasheet
April 2012
©2012 Fairchild Semiconductor Corporation
FDMC7582 Rev.C6
www.fairchildsemi.com
1
FDMC7582 N-Channel PowerTrench
®
MOSFET
FDMC7582
N-Channel PowerTrench
®
MOSFET
25 V, 49 A, 5.0 mΩ
Features
Max r
DS(on)
= 5.0 mΩ at V
GS
= 10 V, I
D
= 16.7 A
Max r
DS(on)
= 7.5 mΩ at V
GS
= 4.5 V, I
D
= 13.6 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
Clip bonding technology further reduces On resistance and
source inductance
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
DS(on), fast switching speed and body
diode reverse recovery performance.
.
Application
High side switching for high end computing
High power density DC-DC synchronous buck
Low loss load switch
Communication & telecon Point of Load
S
S
S
G
D
D
D
D
Top
Power 33
Bottom
D
D
D
D
S
S
S
G
Pin 1
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage (Note 3) ±20 V
I
D
Drain Current - Continuous (Package limited) Tc=25C 49
A
- Continuous (Silicon Limited) Tc=25C 76
- Continuous T
A
= 25 °C (Note 1a) 16.7
- Pulsed 60
E
AS
Single Pulse Avalanche Energy (Note 4) 38 mJ
P
D
Power Dissipation T
C
= 25 °C 52
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 2.4
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7582 FDMC7582 Power 33 13 ’’ 12 mm 3000 units