Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC7660S, MOSFET

January 2014

FDMC7660S Rev.C1

www.fairchildsemi.com

FDMC7660S N-Channel Power Trench

SyncFET

™

FDMC7660S

N-Channel Power Trench

SyncFET

™

30 V, 20 A, 2.2 mΩ

Features

 Max r

DS(on)

= 2.2 mΩ at V

= 10 V, I

= 20 A

 Max r

DS(on)

= 2.95 mΩ at V

= 4.5 V, I

= 18 A

 High performance technology for extremely low r

DS(on)

 Termination is Lead-free and RoHS Compliant

General Description

The FDMC7660S has been designed to minimize losses in

power conversion applications. Advancements in both silicon

and package technologies have been combined to offer the

lowest r

DS(on)

while maintaining excellent switching

performance. This device has the added benefit of an efficient

monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Notebook Vcore/GPU low side switch

 Networking Point of Load low side switch

 Telecom secondary side rectification

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 40

-Continuous (Silicon limited) T

= 25 °C 100

-Continuous T

= 25 °C (Note 1a) 20

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 128 mJ

Power Dissipation 41

Power Dissipation (Note 1a) 2.3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 53

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7660S FDMC7660S Power 33 13 ’’ 12 mm 3000 units

Top

Bottom

Pin 1

Power 33

Summary of content (8 pages)

PAGE 1
FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features General Description Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 2.95 mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 1 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.
PAGE 3
200 150 VGS = 6 V VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1.0 1.5 2.0 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3 VGS = 3 V VGS = 3.5 V 2 1 VGS = 4 V 0 2.5 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 200 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 10 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 VGS, GATE TO SOURCE VOLTAGE (V) 10 Ciss ID = 20 A CAPACITANCE (pF) 8 VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 Coss 1000 Crss 100 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 10 0.1 50 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 50 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 3 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 120 VGS = 10 V 90 VGS = 4.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 SINGLE PULSE o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C1 5 www.fairchildsemi.
PAGE 6
SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMC7660S.
PAGE 7
FDMC7660S N-Channel Power Trench® SyncFET™ Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C1 7 www.fairchildsemi.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.