Datasheet

November 2013
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C2
www.fairchildsemi.com
1
FDMC7678 N-Channel Power Trench
®
MOSFET
FDMC7678
N-Channel Power Trench
®
MOSFET
30 V, 19.5 A, 5.3 mΩ
Features
 Max r
DS(on)
= 5.3 mΩ at V
GS
= 10 V, I
D
= 17.5 A
 Max r
DS(on)
= 6.8 mΩ at V
GS
= 4.5 V, I
D
= 15.0 A
 High performance technology for extremely low r
DS(on)
 Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
Trench
®
process that has
been especially tailored to minimize the on-state resistance.
This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
 DC - DC Buck Converters
 Notebook battery power management
 Load switch in Notebook
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
DD
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 3) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 19.5
A
Drain Current -Continuous (Silicon limited) T
C
= 25 °C 63
-Continuous T
A
= 25 °C (Note 1a) 17.5
-Pulsed 70
E
AS
Single Pulse Avalanche Energy (Note 4) 54 mJ
P
D
Power Dissipation T
C
= 25 °C 31
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 4.0
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7678 FDMC7678 MLP 3.3x3.3 13 ’’ 12 mm 3000 units