Datasheet

November 2013
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C9
www.fairchildsemi.com
1
FDMC7696 N-Channel PowerTrench
®
MOSFET
FDMC7696
N-Channel PowerTrench
®
MOSFET
30 V, 12 A, 11.5 mΩ
Features
 Max r
DS(on)
= 11.5 mΩ at V
GS
= 10 V, I
D
= 12 A
 Max r
DS(on)
= 14.5 mΩ at V
GS
= 4.5 V, I
D
= 10 A
 High performance technology for extremely low r
DS(on)
 Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
 DC/DC Buck Converters
 Notebook battery power management
 Load Switch in Notebook
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 20
A
-Continuous (Silicon limited) T
C
= 25°C 38
-Continuous T
A
= 25°C (Note 1a) 12
-Pulsed 50
E
AS
Single Pulse Avalanche Energy (Note 3) 21 mJ
P
D
Power Dissipation T
C
= 25°C 25
W
Power Dissipation T
A
= 25°C (Note 1a) 2.4
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 5.0
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC7696 FDMC7696 MLP 3.3x3.3 13 ’’ 12
mm 3000 units