Datasheet

www.fairchildsemi.com
4
©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C1
FDMC8015L N-Channel PowerTrench
®
MOSFET
TM
Figure 7.
0 2 4 6 8 10 12 14
0
2
4
6
8
10
I
D
= 7 A
V
DD
= 25 V
V
DD
= 15 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 20 V
Gate Charge Characteristics
Figure 8.
0.1 1 10 40
10
100
1000
2000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 20
1
10
20
T
J
= 100
o
C
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
5
10
15
20
25
Limited by Package
V
GS
= 4.5 V
R
θJC
= 5.1
o
C/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 11. Forwar d Bias Safe
Operating Area
0.1 1 10 100
0.01
0.1
1
10
50
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
Figure 12.
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.5
1
10
100
500
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25 °C unless otherwise noted