Datasheet
July 2013
©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C1
www.fairchildsemi.com
1
FDMC8030 Dual N-Channel Power Trench
®
MOSFET
FDMC8030
Dual N-Channel Power Trench
®
MOSFET
40 V, 12 A, 10 mΩ
Features
Max r
DS(on)
= 10 mΩ at V
GS
= 10 V, I
D
= 12 A
Max r
DS(on)
= 14 mΩ at V
GS
= 4.5 V, I
D
= 10 A
Max r
DS(on)
= 28 mΩ at V
GS
= 3.2 V, I
D
= 4 A
Termination is Lead-free and RoHS Compliant
General Description
This device includes two 40V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
Battery Protection
Load Switching
Point of Load
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage (Note 4) ±12 V
I
D
Drain Current -Continuous T
A
= 25 °C (Note 1a) 12
A
-Pulsed 50
E
AS
Single Pulse Avalanche Energy (Note 3) 21 mJ
P
D
Power Dissipation T
A
= 25 °C (Note 1a) 1.9
W
Power Dissipation T
A
= 25 °C (Note 1b) 0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 155
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8030 FDMC8030 Power 33 13 ’’ 12 mm 3000 units
D1
D2
S1
G1
S2
G2
Power 33
Pin 1
S1S1
S2S2
G2
S2
G1
S1
S2
S2
S1
S1
4
3
2
18
7
6
5
Bottom Drain1 Contact
Bottom Drain2 Contact
Q2
Q1