Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC8462, MOSFET

March 2008

FDMC8462 Rev.C

www.fairchildsemi.com

FDMC8462 N-Channel Power Trench

MOSFET

FDMC8462

N-Channel Power Trench

MOSFET

40V, 20A, 5.8mΩ

Features

 Max r

DS(on)

= 5.8mΩ at V

= 10V, I

= 13.5A

 Max r

DS(on)

= 8.0mΩ at V

= 4.5V, I

= 11.8A

 Low Profile - 1mm max in Power 33

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 20

-Continuous (Silicon limited) T

= 25°C 64

-Continuous T

= 25°C (Note 1a) 14

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 216 mJ

Power Dissipation T

= 25°C 41

Power Dissipation T

= 25°C (Note 1a) 2.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 53

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8462 FDMC8462 Power 33 13’’ 12mm 3000 units

Bottom

Power 33

Pin 1

Top

Summary of content (7 pages)

PAGE 1
FDMC8462 N-Channel Power Trench ® tm MOSFET 40V, 20A, 5.8mΩ Features General Description Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 11.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 32V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
5.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 VGS = 10V ID, DRAIN CURRENT (A) 40 VGS = 3.5V VGS = 4.5V 30 VGS = 4V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 10 VGS = 3V 0 0.0 0.5 1.0 VGS = 3V 4.0 3.5 VGS = 3.5V 3.0 2.5 VGS = 4V 2.0 1.5 1.0 1.5 0 10 20 30 40 50 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 ID = 13.5A VGS = 10V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
5000 ID = 13.5A VDD = 16V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 20V 6 VDD = 24V 4 Ciss 1000 Coss 100 f = 1MHz VGS = 0V 2 10 0.1 0 0 5 10 15 20 25 30 35 1 Figure 7. Gate Charge Characteristics 75 ID, DRAIN CURRENT (A) 10 TJ = 25oC TJ = 125oC 60 VGS = 10V 45 VGS = 4.5V 30 15 o RθJC = 3 C/W Limited by Package 1 0.01 0.1 1 10 100 0 25 400 50 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 0.0002 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve FDMC8462 Rev.C 5 www.fairchildsemi.
PAGE 6
FDMC8462 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMC8462 Rev.C 6 www.fairchildsemi.
PAGE 7
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