Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC8554, MOSFET

June 2014

FDMC8554 N-Channel PowerTrench

MOSFET

FDMC8554 Rev.C2

www.fairchildsemi.com

FDMC8554

N-Channel Power Trench

MOSFET

20V, 16.5A, 5mΩ

Features

 Max r

DS(on)

= 5mΩ at V

= 10V, I

= 16.5A

 Max r

DS(on)

= 6.4mΩ at V

= 4.5V, I

= 14A

 Low Profile - 1mm max in Power 33

 RoHS Compliant

General Description

This N-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor‘s advanced Power Trench

process. It has been optimized for power management

applications.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 20 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25°C 16.5

A -Continuous T

= 25°C (Note 1a) 16.5

-Pulsed 36

Power Dissipation T

= 25°C 41

Power Dissipation T

= 25°C (Note 1a) 2.0

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 60

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8554 FDMC8554 Power 33 7’’ 8mm 3000 units

Bottom

Top

Pin 1

MLP 3.3x3.3

Summary of content (7 pages)

PAGE 1
FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features General Description Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 6.4mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 20 ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 15.7 mV/°C VDS = 16V, VGS = 0V 1 TJ = 125°C 100 VGS = ±20V, VDS = 0V μA ±100 nA 3.
PAGE 3
VGS = 4.5V VGS =5V 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 200 VGS = 10V VGS = 4V 100 VGS = 3.5V 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 VGS = 5V VGS =4.5V 1 VGS = 10V 0 0 50 100 150 ID, DRAIN CURRENT(A) 200 20 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.4 1.2 1.0 ID = 16.5A VGS = 10V 0.8 0.6 -75 ID = 16.5A PULSE DURATION = 80μs DUTY CYCLE = 0.
PAGE 4
FDMC8554 N-Channel PowerTrench® MOSFET 10 5000 ID = 16.5A Ciss VDD = 5V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) Typical Characteristics TJ = 25°C unless otherwise noted VDD = 10V 6 4 VDD = 15V 2 Coss 1000 10 20 30 Qg, GATE CHARGE(nC) 40 f = 1MHz VGS = 0V 100 0.1 0 0 Crss 50 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) TJ = 25oC 10 TJ = 125oC 60 VGS = 10V 40 Limited by Package VGS = 4.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.002 -3 10 -2 10 -1 0 1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 2 10 3 10 Figure 13. Transient Thermal Response Curve FDMC8554 Rev.C2 5 www.fairchildsemi.
PAGE 6
FDMC8554 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.