Datasheet

September 2013
©2012 Fairchild Semiconductor Corporation
FDMC86102 Rev.C3
www.fairchildsemi.com
1
FDMC86102 N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMC86102
N-Channel Shielded Gate PowerTrench
®
MOSFET
100 V, 20 A, 24 mΩ
Features
Shielded Gate MOSFET Technology
Max r
DS(on)
= 24 mΩ at V
GS
= 10 V, I
D
= 7 A
Max r
DS(on)
= 38 mΩ at V
GS
= 6 V, I
D
= 5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized for
the on-state resistance and yet maintain superior
switching performance.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 20
A -Continuous T
A
= 25 °C (Note 1a) 7
-Pulsed (Note 4) 60
E
AS
Single Pulse Avalanche Energy (Note 3) 72 mJ
P
D
Power Dissipation T
C
= 25 °C 41
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86102 FDMC86102 Power 33 13’’ 12 mm 3000 units
Top
Power 33
Bottom
D
D
D
D
S
S
S
G
Pin 1
S
S
S
G
D
D
D
D

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