Datasheet

November 2013
©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C2
www.fairchildsemi.com
1
FDMC86116LZ N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMC86116LZ
N-Channel Shielded Gate PowerTrench
®
MOSFET
100 V, 7.5 A, 103 mΩ
Features
 Shielded Gate MOSFET Technology
 Max r
DS(on)
= 103 mΩ at V
GS
= 10 V, I
D
= 3.3 A
 Max r
DS(on)
= 153 mΩ at V
GS
= 4.5 V, I
D
= 2.7 A
 HBM ESD protection level > 3 KV typical (Note 4)
 100% UIL Tested
 RoHS Compliant
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced PowerTrench
®
process
that incorporates Shielded Gate technology. This process has
been optimized for the on-state resistance and yet maintain
superior switching performance. G-S zener has been added to
enhance ESD voltage level.
Application
 DC - DC Conversion
D
D
D
D
S
S
S
G
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 7.5
A -Continuous T
A
= 25 °C (Note 1a) 3.3
-Pulsed 15
E
AS
Single Pulse Avalanche Energy (Note 3) 12 mJ
P
D
Power Dissipation T
C
= 25 °C 19
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 6.5
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86116Z FDMC86116LZ Power 33 13 ’’ 12 mm 3000 units