Datasheet

June 2014
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C6
www.fairchildsemi.com
1
FDMC8622 N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMC8622
N-Channel Shielded Gate PowerTrench
®
MOSFET
100 V, 16 A, 56 mΩ
Features
 Shielded Gate MOSFET Technology
 Max r
DS(on)
= 56 mΩ at V
GS
= 10 V, I
D
= 4 A
 Max r
DS(on)
= 90 mΩ at V
GS
= 6 V, I
D
= 3 A
 High performance trench technology for extremely low r
DS(on)
 High power and current handling capability in a widely used
surface mount package
 100% UIL Tested
 Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized for
r
DS(on)
, switching performance and ruggedness.
Application
 DC-DC Primary Switch
MLP 3.3X3.3
S
S
S
G
D
D
D
D
1234
5
DDDD
G
SSS
Bottom
Top
678
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 16
A -Continuous T
A = 25 °C (Note 1a) 4
-Pulsed (Note 4) 30
E
AS
Single Pulse Avalanche Energy (Note 3) 37 mJ
P
D
Power Dissipation T
C
= 25 °C 31
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 4.0
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8622 FDMC8622 MLP 3.3X3.3 13 ’’ 12 mm 3000 units