Datasheet

November 2013
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C3
www.fairchildsemi.com
1
FDMC86244 N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMC86244
N-Channel Shielded Gate PowerTrench
®
MOSFET
150 V, 9.4 A, 134 mΩ
Features
 Shielded Gate MOSFET Technology
 Max r
DS(on)
= 134 mΩ at V
GS
= 10 V, I
D
= 2.8 A
 Max r
DS(on)
= 186 mΩ at V
GS
= 6 V, I
D
= 2.4 A
 Low Profile - 1 mm max in Power 33
 100% UIL Tested
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized for
the on-state resistance and yet maintain superior
switching performance.
Application
 DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25°C 9.4
A -Continuous T
A
= 25°C (Note 1a) 2.8
-Pulsed 12
E
AS
Single Pulse Avalanche Energy (Note 3) 12 mJ
P
D
Power Dissipation T
C
= 25°C 26
W
Power Dissipation T
A
= 25°C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to + 150 °C
R
θJC
Thermal Resistance, Junction to Case 4.7
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 125
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86244 FDMC86244 Power 33 13’’ 12
mm 3000 units
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
S
S
S
G
D
D
D
D