Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC86248, MOSFET

September 2012

FDMC86248 Rev. C3

www.fairchildsemi.com

FDMC86248 N-Channel Power Trench

MOSFET

FDMC86248

N-Channel Power Trench

MOSFET

150 V, 13 A, 90 mΩ

Features

 Max r

DS(on)

= 90 mΩ at V

= 10 V, I

= 3.4 A

 Max r

DS(on)

= 125 mΩ at V

= 6 V, I

= 2.9 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Applications

 Primary MOSFET

 MV synchronous rectifier

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 13

A -Continuous T

= 25 °C (Note 1a) 3.4

-Pulsed 15

Single Pulse Avalanche Energy (Note 3) 37 mJ

Power Dissipation T

= 25 °C 36

Power Dissipation T

= 25 °C (Note 1a) 2.3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 3.4

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 53

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86248 FDMC86248 Power 33 13 ’’ 12 mm 3000 units

Top

Power 33

Bottom

Pin 1

Summary of content (7 pages)

PAGE 1
FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
VGS = 10 V VGS = 6.5 V VGS = 6 V 12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 VGS = 5.5 V 9 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 5 V 6 3 0 VGS = 4.5 V 0 1 2 3 4 5 5 4 VGS = 4.5 V VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 0 0 3 Figure 1. On-Region Characteristics 9 12 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 3.4 A VGS = 10 V 2.2 rDS(on), DRAIN TO 2.0 1.8 1.6 1.4 1.2 1.0 0.
PAGE 4
Ciss VDD = 50 V ID = 3.4 A 8 VDD = 75 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 1000 10 6 VDD = 100 V 4 100 Coss 10 2 Crss f = 1 MHz VGS = 0 V 0 0 2 4 6 1 0.1 8 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 14 20 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 3.4 C/W 10 TJ = 25 oC TJ = 100 oC 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC86248 Rev. C3 5 www.fairchildsemi.
PAGE 6
FDMC86248 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC86248 Rev. C3 6 www.fairchildsemi.
PAGE 7
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.