Datasheet
May 2010
©2010 Fairchild Semiconductor Corporation
FDMC86324 Rev.C
www.fairchildsemi.com
1
FDMC86324 N-Channel Power Trench
®
MOSFET
FDMC86324
N-Channel Power Trench
®
MOSFET
80 V, 20 A, 23 mΩ
Features
Max r
DS(on)
= 23 mΩ at V
GS
= 10 V, I
D
= 7 A
Max r
DS(on)
= 37 mΩ at V
GS
= 6 V, I
D
= 4 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 80 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 20
A
-Continuous (Silicon limited) T
C
= 25 °C 30
-Continuous T
A
= 25 °C (Note 1a) 7
-Pulsed 30
E
AS
Single Pulse Avalanche Energy (Note 3) 72 mJ
P
D
Power Dissipation T
C
= 25 °C 41
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86324 FDMC86324 Power 33 13’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Top
Power 33
Bottom
D
D
D
D
S
S
S
G
Pin 1