Datasheet

July 2008
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
www.fairchildsemi.com
1
FDMC8651 N-Channel Power Trench
®
MOSFET
FDMC8651
N-Channel Power Trench
®
MOSFET
30 V, 20 A, 6.1 m
Features
Max r
DS(on)
= 6.1 m at V
GS
= 4.5 V, I
D
= 15 A
Max r
DS(on)
= 9.3 m at V
GS
= 2.5 V, I
D
= 12 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
General Description
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low
r
DS(on)
has been maintained to
provide a sub logic-level device.
Applications
Synchronous rectifier
3.3 V input synchronous buck switch
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±12 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 20
A
-Continuous (Silicon limited) T
C
= 25 °C 64
-Continuous T
A
= 25 °C (Note 1a) 15
-Pulsed 60
E
AS
Single Pulse Avalanche Energy (Note 3) 128 mJ
P
D
Power Dissipation T
C
= 25 °C 41
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8651 FDMC8651 Power 33 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Top
Power 33
Bottom
D
D
D
D
S
S
S
G
Pin 1

Summary of content (7 pages)