Datasheet

FDMC8651 N-Channel Power Trench
®
MOSFET
www.fairchildsemi.com
2
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 µA, V
GS
= 0 V 30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, referenced to 25 °C 27.5 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1 µA
I
GSS
Gate to Source Leakage Current V
GS
= ±12 V, V
DS
= 0 V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 µA 0.8 1.1 1.5 V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, referenced to 25 °C -4.4 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 4.5 V, I
D
= 15 A 4.3 6.1
mV
GS
= 2.5 V, I
D
= 12 A 6.2 9.3
V
GS
= 4.5 V, I
D
= 15 A, T
J
= 125 °C 6.3 9.0
g
FS
Forward Transconductance V
DD
= 5 V, I
D
= 15 A 91 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
2530 3365 pF
C
oss
Output Capacitance 865 1150 pF
C
rss
Reverse Transfer Capacitance 140 205 pF
R
g
Gate Resistance 0.8
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15 V, I
D
= 15 A,
V
GS
= 4.5 V, R
GEN
= 6
18 31 ns
t
r
Rise Time 9 18 ns
t
d(off)
Turn-Off Delay Time 35 56 ns
t
f
Fall Time 6 12 ns
Q
g(TOT)
Total Gate Charge at 4.5 V
V
DD
= 15 V, I
D
= 15 A
19.4 27.2 nC
Q
gs
Total Gate Charge 4.8 nC
Q
gd
Gate to Drain “Miller” Charge 4.2 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 15 A (Note 2) 0.8 1.3
V
V
GS
= 0 V, I
S
= 1.7 A (Note 2) 0.7 1.2
t
rr
Reverse Recovery Time
I
F
= 15 A, di/dt = 100 A/µs
35 55 ns
Q
rr
Reverse Recovery Charge 17 30 nC
NOTES:
1. R
θJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
J
= 25 °C; N-ch: L = 1 mH, I
AS
= 16 A, V
DD
= 27 V, V
GS
= 10 V.
53 °C/W when mounted on a
1 in
2
pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz copper
a.
b.