Datasheet

June 2014
©2011 Fairchild Semiconductor Corporation
FDMC86520L Rev.C1
www.fairchildsemi.com
1
FDMC86520L N-Channel PowerTrench
®
MOSFET
FDMC86520L
N-Channel Power Trench
®
MOSFET
60 V, 22 A, 7.9 mΩ
Features
Max r
DS(on)
= 7.9 mΩ at V
GS
= 10 V, I
D
= 13.5 A
Max r
DS(on)
= 11.7 mΩ at V
GS
= 4.5 V, I
D
= 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 22
A -Continuous T
A
= 25 °C (Note 1a) 13.5
-Pulsed 60
E
AS
Single Pulse Avalanche Energy (Note 3) 79 mJ
P
D
Power Dissipation T
C
= 25 °C 40
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3.1
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86520L FDMC86520L Power 33 13 ’’ 12 mm 3000 units

Summary of content (7 pages)