Datasheet

June 2014
FDMC8854 N-Channel PowerTrench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC8854 Rev.C4
www.fairchildsemi.com
1
FDMC8854
N-Channel Power Trench
®
MOSFET
30V, 15A, 5.7mΩ
Features
Max r
DS(on)
= 5.7mΩ at V
GS
= 10V, I
D
= 15A
Max r
DS(on)
= 7.6mΩ at V
GS
= 4.5V, I
D
= 13A
Low Profile - 1mm max in Power 33
RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25°C 15
A -Continuous T
A
= 25°C (Note 1a) 15
-Pulsed 100
P
D
Power Dissipation T
C
= 25°C 41
W
Power Dissipation T
A
= 25°C (Note 1a) 2.0
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8854 FDMC8854 MLP 3.3x3.3 7’’ 8mm 3000 units
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4

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