Datasheet

FDMC8878 N-Channel Power Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMC887
8 Rev.D
5
www.fairchi
ldsemi.com
1
FDMC8878
N-Channel Power Trench
®
MOSFET
30V, 16.5A, 14m:
Features
 Max r
DS(on)
= 14
m
:
at V
GS
= 10V
, I
D
= 9.6A
 Max r
DS(on)
= 17m: at V
GS
= 4.5V, I
D
= 8.7A
 Low Profile - 0.8
 RoHS Compliant
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s
advanced Power Trench
process. It has been optimized for power management
applications.
Application
 DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source
V
oltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 16.5
A
-Continuous (Silicon limited) T
C
= 25°C 38
-Continuous T
A
= 25°C (Note 1a) 9.6
-Pulsed 60
P
D
Power Dissipation T
C
= 25°C 31
W
Power Dis
sipation T
A
= 25°C (Note 1a) 2.1
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 4
°C/W
R
TJA
Thermal Res
istance, Junction to Ambient (Note 1a) 60
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8878 FDMC8878
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
MLP 3.3X3.3
13 ”
12 mm 3000 units
November 2013
mm max in
MLP 3.3X3.3
1
2
3
4
5
D
D
D
D
G
S
S
S
Bottom
Top
MLP 3.3x3.3
6
7
8
Pin 1