Datasheet

FDMC8878 N-Channel Power Trench
®
MOSFET
4
Figure
7.
0510 1
5 20
0
2
4
6
8
10
V
DD
= 20V
V
DD
=
15V
V
GS
, GATE
TO SOURCE VOLTAGE(V)
Q
g
, GAT
E CHARGE(nC)
V
DD
= 10V
I
D
= 9.6A
Gate Charge Cha
racteristics Figure 8.
0.11 10
10
0
1000
f =
1MH
z
V
GS
= 0V
CAPACITA
NCE (pF)
V
DS
, DRAI
N TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
3
000
30
50
Ca p
a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01
0.1 1 10
1
10
T
J
= 2
5
o
C
T
J
= 125
o
C
t
AV
, TIME
IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT(A)
20
80
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50
75 100 125 150
0
2
4
6
8
10
12
R
TJA
= 6
0
o
C/
W
V
GS
=
4.5V
V
GS
= 10V
I
D
, DRAI
N CURRENT (A)
T
A
, AM
BIENT TEMPERATURE
(
o
C)
M a x i m u m C o n t i n u o u s D r a i n
Current vs Ambient Temperature
Fig u r e 11. F o r w a rd Bi a s S afe
Operating Area
0.1 1 10
0.001
0.
01
0.1
1
10
1s
DC
10s
100ms
10ms
1ms
100us
O
P
E
RATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on
)
SINGLE PU
LSE
T
J
= MAX RATE
D
T
A
= 25
o
C
I
D
, DRAIN CU
RRENT (A)
V
DS
, DRA
IN to SOURCE VOLTAGE (V)
80
80
Figu
re 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= 10
V
SING
LE PULSE
P(
PK
), PEAK TRANSIENT POW
ER (W)
t, PU
LSE WIDTH (s)
300
0.5
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERA
TE PEAK
CURRENT AS FOLLOWS:
150 T
A
–
125
-----------------------
S i
n g l e P u l s e Ma x i m u m
Power Dissipation
Typical Characteristics T
J
= 25°C unless otherwise noted
©20
1
2 Fairchild Semiconductor Corporation
FDMC887
8 Rev.
www.fairchildsemi.com
D5