Datasheet

June 2014
©2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E4
www.fairchildsemi.com
1
FDMC8884 N-Channel PowerTrench
®
MOSFET
FDMC8884
N-Channel PowerTrench
®
MOSFET
30 V, 15 A, 19 mΩ
Features
Max r
DS(on)
= 19 mΩ at V
GS
= 10 V, I
D
= 9.0 A
Max r
DS(on)
= 30 mΩ at V
GS
= 4.5 V, I
D
= 7.2 A
High performance technology fo
r extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is we
ll suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 15
A -Continuous T
A
= 25 °C (Note 1a) 9.0
-Pulsed 40
E
AS
Single Pulse Avalanche Energy (Note 3) 24 mJ
P
D
Power Dissipation T
C
= 25 °C 18
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 6.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 53
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8884 FDMC8884 MLP 3.3x3.3 13 ’’ 12 mm 3000 units
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4

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