Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMC89521L, MOSFET

July 2013

FDMC89521L Rev. C1

www.fairchildsemi.com

FDMC89521L Dual N-Channel PowerTrench

MOSFET

FDMC89521L

Dual N-Channel PowerTrench

MOSFET

60 V, 8.2 A, 17 mΩ

Features

 Max r

DS(on)

= 17 mΩ at V

= 10 V, I

= 8.2 A

 Max r

DS(on)

= 27 mΩ at V

= 4.5 V, I

= 6.7 A

 Termination is Lead-free

 RoHS Compliant

General Description

This device includes two 60 V N-Channel MOSFETs in a dual

Power 33 (3 mm X 3 mm MLP) package. The package is

enhanced for exceptional thermal performance.

Applications

 Battery Protection

 Load Switching

 Bridge Topologies

Power 33

Pin 1

S2S2

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V

Gate to Source Voltage ) ±20 V

Drain Current -Continuous T

= 25 °C (Note 1a) 8.2

-Pulsed 40

Single Pulse Avalanche Energy (Note 3) 32 mJ

Power Dissipation T

= 25 °C (Note 1a) 1.9

Power Dissipation T

= 25 °C (Note 1b) 0.8

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 65

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 155

Device Marking Device Package Reel Size Tape Width Quantity

FDMC89521L FDMC89521L Power 33 13 ’’ 12

mm 3000 units

Summary of content (7 pages)

PAGE 1
FDMC89521L Dual N-Channel PowerTrench® MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 30 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
4 VGS = 10 V VGS = 6 V VGS = 5 V 30 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 4 V 20 VGS = 4.5 V VGS = 3.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 3 VGS = 4.5 V 2 1 VGS = 5 V 0 0 2.5 10 20 30 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 ID = 8.2 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 ID = 8.2 A Ciss 8 VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 20 V VDD = 40 V 4 2 1000 Coss 100 10 Crss f = 1 MHz VGS = 0 V 0 0 3 6 9 12 15 1 0.1 18 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 10 60 Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 TJ = 100 oC oC TJ = 125 TJ = 25 oC 10 1 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 155 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC89521L Rev. C1 5 www.fairchildsemi.
PAGE 6
FDMC89521L Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC89521L Rev. C1 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.