Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDME1034CZT, MOSFET

July 2010

FDME1034CZT Complementary PowerTrench

MOSFET

FDME1034CZT Rev.C1

FDME1034CZT

Complementary PowerTrench

MOSFET

N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ

Features

Q1: N-Channel

 Max r

DS(on)

= 66 mΩ at V

= 4.5 V, I

= 3.4 A

 Max r

DS(on)

= 86 mΩ at V

= 2.5 V, I

= 2.9 A

 Max r

DS(on)

= 113 mΩ at V

= 1.8 V, I

= 2.5 A

 Max r

DS(on)

= 160 mΩ at V

= 1.5 V, I

= 2.1 A

Q2: P-Channel

 Max r

DS(on)

= 142 mΩ at V

= -4.5 V, I

= -2.3 A

 Max r

DS(on)

= 213 mΩ at V

= -2.5 V, I

= -1.8 A

 Max r

DS(on)

= 331 mΩ at V

= -1.8 V, I

= -1.5 A

 Max r

DS(on)

= 530 mΩ at V

= -1.5 V, I

= -1.2 A

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony

oxides

 HBM ESD protection level > 1600 V (Note 3)

 RoHS Compliant

General Description

This device is designed specifically as a single package solution

for a DC/DC ‘Switching’ MOSFET in cellular handset and other

ultra-portable applications. It features an independent

N-Channel & P-Channel MOSFET with low on-state resistance

for minimum conduction losses. The gate charge of each

MOSFET is also minimized to allow high frequency switching

directly from the controlling device.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal

performance for it's physical size and is well suited to switching

and linear mode applications.

Applications

 DC-DC Conversion

 Level Shifted Load Switch

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1 Q2 Units

Drain to Source Voltage 20 -20 V

Gate to Source Voltage ±8 ±8 V

Drain Current -Continuous T

= 25 °C (Note 1a) 3.8 -2.6

-Pulsed 6 -6

Power Dissipation for Single Operation T

= 25 °C (Note 1a) 1.4

Power Dissipation for Single Operation T

= 25 °C (Note 1b) 0.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a) 90

°C/W

θJA

Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b) 195

Device Marking Device Package Reel Size Tape Width Quantity

5T FDME1034CZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

Summary of content (11 pages)

PAGE 1
FDME1034CZT Complementary PowerTrench® MOSFET N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ Features General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other ultra-portable applications. It features an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses.
PAGE 2
Symbol Parameter Test Conditions Type Min 20 -20 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = -250 μA, VGS = 0 V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = -250 μA, referenced to 25 °C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Q1 Q2 1 -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V All ±10 μA 1.0 -1.
PAGE 3
Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.7 -0.8 1.2 -1.2 V Q1 Q2 8.5 16 17 29 ns Q1 Q2 1.4 4.4 10 10 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Time VGS = 0 V, IS = 0.9 A VGS = 0 V, IS = -0.9 A (Note 2) (Note 2) Q1 IF = 3.4 A, di/dt = 100 A/μS Q2 IF = -2.3 A, di/dt = 100 A/μs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.
PAGE 4
VGS = 4.5 V VGS = 3 V VGS = 2.5 V VGS = 1.8 V 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6 VGS = 1.5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 3.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 1.5 V 2.0 VGS = 1.8 V 1.5 1.0 VGS = 4.5 V 0.5 1.5 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 300 ID = 3.4 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 5
00 ID = 3.4 A Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 8 V 3.0 VDD = 10 V VDD = 12 V 1.5 100 Coss 0.0 0 1 2 1 0.1 3 1 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -1 10 Ig, GATE LEAKAGE CURRENT (A) 100 μs ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.
PAGE 6
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 195 C/W -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 6 www.fairchildsemi.
PAGE 7
6 -ID, DRAIN CURRENT (A) VGS = -3 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 VGS = -4.5 V VGS = -2.5 V 4 VGS = - 1.8 V 2 VGS = -1.5 V 0 0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -1.5 V 2 1 0 0 2 4 6 -ID, DRAIN CURRENT (A) Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 500 ID = -2.3 A VGS = -4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.
PAGE 8
ID = -2.3 A Ciss VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 1000 4.5 3.0 VDD = -10 V 1.5 VDD = -12 V 100 Coss Crss f = 1 MHz VGS = 0 V 10 0.1 0.0 0 2 4 6 10 20 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 10 -1 10 -Ig, GATE LEAKAGE CURRENT (A) 100 us -ID, DRAIN CURRENT (A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.
PAGE 9
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 195 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 24. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 9 www.fairchildsemi.
PAGE 10
FDME1034CZT Complementary PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 10 www.fairchildsemi.
PAGE 11
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.