Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDME410NZT, MOSFET

October 2013

FDME410NZT Rev.C3

www.fairchildsemi.com

FDME410NZT N-Channel PowerTrench

MOSFET

FDME410NZT

N-Channel PowerTrench

MOSFET

20 V, 7 A, 26 mΩ

Features

 Max r

DS(on)

= 26 mΩ at V

= 4.5 V, I

= 7 A

 Max r

DS(on)

= 31 mΩ at V

= 2.5 V, I

= 6 A

 Max r

DS(on)

= 39 mΩ at V

= 1.8 V, I

= 5 A

 Max r

DS(on)

= 53 mΩ at V

= 1.5 V, I

= 4 A

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides

 HBM ESD protection level > 1800V (Note3)

 RoHS Compliant

General Description

This Single N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process to

optimize the r

DS(ON)

@ VGS = 1.5 V on special MicroFET

leadframe.

Applications

 Li-lon Battery Pack

 Baseband Switch

 Load Switch

 DC-DC Conversion

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous T

= 25 °C (Note 1a) 7

-Pulsed 15

Power Dissipation for Single Operation T

= 25 °C (Note 1a) 2.1

Power Dissipation for Single Operation T

= 25 °C (Note 1b) 0.7

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 60

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 175

Device Marking Device Package Reel Size Tape Width Quantity

6T FDME410NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

Summary of content (7 pages)

PAGE 1
FDME410NZT N-Channel PowerTrench® MOSFET 20 V, 7 A, 26 mΩ Features General Description Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A Applications Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 μA 1.
PAGE 3
15 2.5 ID, DRAIN CURRENT (A) VGS = 3 V 10 VGS = 2.5 V VGS = 1.8 V 5 VGS = 1.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 2.0 VGS =1.5 V VGS = 1.8 V 1.5 VGS = 2.5 V 1.0 0.5 1.0 0 5 Figure 1. On-Region Characteristics 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 100 ID = 7 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 4
5000 ID = 7 A VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 10 V 1.5 Ciss 1000 Coss Crss 100 VDD = 12 V f = 1 MHz VGS = 0 V 0.0 0 2 4 6 8 10 0.01 10 Figure 7. Gate Charge Characteristics 10 20 1 Figure 8. Capacitance vs Drain to Source Voltage 20 -1 10 VDS = 0 V -2 10 100 us 10 ID, DRAIN CURRENT (A) Ig, GATE LEAKAGE CURRENT (A) 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA =175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C3 5 www.fairchildsemi.
PAGE 6
FDME410NZT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME410NZT Rev.C3 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.