Datasheet

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FDME510PZT P-Channel PowerTrench

MOSFET

FDME510PZT Rev.C3

www.fairchildsemi.com

October 2013

FDME510PZT

P-Channel PowerTrench

MOSFET

-20 V, -6 A, 37 mΩ

Features

 Max r

DS(on)

= 37 mΩ at V

= -4.5 V, I

= -5 A

 Max r

DS(on)

= 50 mΩ at V

= -2.5 V, I

= -4 A

 Max r

DS(on)

= 65 mΩ at V

= -1.8 V, I

= -3 A

 Max r

DS(on)

= 100 mΩ at V

= -1.5 V, I

= -2 A

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides

 HBM ESD protection level > 2400V (Note3)

 RoHS Compliant

General Description

This device is designed specifically for battery charging or load

switching in cellular handset and other ultraportable applications.

It features a MOSFET with low on-state resistance.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal

performance for its physical size and is well suited to switching

and linear mode applications.

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -20 V

Gate to Source Voltage ±8 V

Drain Current -Continuous T

= 25 °C (Note 1a) -6

-Pulsed -15

Power Dissipation for Single Operation T

= 25 °C (Note 1a) 2.1

Power Dissipation for Single Operation T

= 25 °C (Note 1b) 0.7

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 60

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 175

Device Marking Device Package Reel Size Tape Width Quantity

7T FDME510PZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

Summary of content (7 pages)

PAGE 1
FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ Features General Description Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A This device is designed specifically for battery charging or load Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A The MicroFET 1.6x1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -13 mV/°C -1 μA ±10 μA -1.
PAGE 3
VGS = -4.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 15 VGS = -3 V -ID, DRAIN CURRENT (A) VGS = -2.5 V VGS = - 1.8 V 10 VGS = -1.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = -1.5 V 2 VGS = -1.8 V VGS = -2.5 V 1 0 1.5 0 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 ID = -5 A VGS = -4.
PAGE 4
5000 ID = -5 A VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -10 V 1.5 VDD = -12 V Ciss 1000 Coss 100 0.0 0 4 8 12 Crss 50 0.1 16 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 175 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 5 www.fairchildsemi.
PAGE 6
FDME510PZT P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME510PZT Rev.C3 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.