Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDME820NZT, MOSFET

October 2013

FDME820NZT Rev.C2

www.fairchildsemi.com

FDME820NZT N-Channel PowerTrench

MOSFET

FDME820NZT

N-Channel PowerTrench

MOSFET

20 V, 9 A, 18 mΩ

Features

 Max r

DS(on)

= 18 mΩ at V

= 4.5 V, I

= 9 A

 Max r

DS(on)

= 24 mΩ at V

= 2.5 V, I

= 7.5 A

 Max r

DS(on)

= 32 mΩ at V

= 1.8 V, I

= 7 A

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides

 HBM ESD protection level >2.5 kV (Note3)

 RoHS Compliant

General Description

This Single N-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process to

optimize the r

DS(ON)

@ VGS = 1.8 V on special MicroFET

leadframe.

Applications

 Li-lon Battery Pack

 Baseband Switch

 Load Switch

 DC-DC Conversion

MicroFET 1.6x1.6 Thin

TOP

BOTTOM

Pin 1

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 20 V

Gate to Source Voltage ±12 V

Drain Current -Continuous T

= 25 °C (Note 1a) 9

-Pulsed 40

Power Dissipation for Single Operation T

= 25 °C (Note 1a) 2.1

Power Dissipation for Single Operation T

= 25 °C (Note 1b) 0.7

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 70

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 190

Device Marking Device Package Reel Size Tape Width Quantity

8T FDME820NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

Summary of content (7 pages)

PAGE 1
FDME820NZT N-Channel PowerTrench® MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe. Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 μA 1.
PAGE 3
40 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 30 VGS = 1.8 V 20 VGS = 2 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 VGS = 1.5 V 0 0 0.5 1.0 1.5 2.0 4 VGS = 1.8 V VGS = 2 V 3 2 VGS = 3 V 0 2.5 Figure 1. On Region Characteristics VGS = 4.5 V 0 10 20 ID, DRAIN CURRENT (A) 40 80 ID = 9 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2.
PAGE 4
2000 ID = 9 A 3.6 1000 VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 2.7 VDD = 10 V 1.8 VDD = 12 V Ciss Coss 0.9 0.0 f = 1 MHz VGS = 0 V 0 3 6 9 100 0.1 12 1 Figure 7. Gate Charge Characteristics 20 Figure 8.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 190 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C2 5 www.fairchildsemi.
PAGE 6
FDME820NZT N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDME820NZT Rev.C2 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.