Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDME905PT, MOSFET

October 2013

FDME905PT Rev.C4

www.fairchildsemi.com

FDME905PT P-Channel PowerTrench

MOSFET

FDME905PT

P-Channel PowerTrench

MOSFET

-12 V, -8 A, 22 mΩ

Features

 Max r

DS(on)

= 22 mΩ at V

= -4.5 V, I

= -8 A

 Max r

DS(on)

= 26 mΩ at V

= -2.5 V, I

= -7.3 A

 Max r

DS(on)

= 97 mΩ at V

= -1.8 V, I

= -3.8 A

 Low profile: 0.55 mm maximum in the new package

MicroFET 1.6x1.6 Thin

 Free from halogenated compounds and antimony oxides

 RoHS Compliant

General Description

This device is designed specifically for battery charging or load

switching in cellular handset and other ultraportable applications.

It features a MOSFET with low on-state resistance.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal

performance for its physical size and is well suited to switching

and linear mode applications.

MicroFET 1.6x1.6 Thin

TOP BOTTOM

Pin 1

Bottom Drain Contact

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -12 V

Gate to Source Voltage ±8 V

Drain Current -Continuous T

= 25 °C (Note 1a) -8

-Pulsed -30

Power Dissipation T

= 25 °C (Note 1a) 2.1

Power Dissipation T

= 25 °C (Note 1b) 0.7

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 4.5

°C/WR

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 60

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 175

Device Marking Device Package Reel Size Tape Width Quantity

E95 FDME905PT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units

Summary of content (6 pages)

PAGE 1
FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features General Description Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A The MicroFET 1.6x1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -9.6 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -12 V -8.7 mV/°C -1 μA ±100 nA -1.
PAGE 3
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3 V 20 VGS = -2.5 V VGS = -1.8 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 2 VGS = -1.8 V VGS = -2.5 V 1 VGS = -3 V VGS = -4.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1.5 10 20 -ID, DRAIN CURRENT (A) 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 80 ID = -8 A VGS = -4.
PAGE 4
3000 ID = -8 A Ciss VDD = -5 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = -6 V VDD = -7 V 1.5 1000 Coss Crss f = 1 MHz VGS = 0 V 0.0 0 4 8 12 100 0.1 16 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage 100 300 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 μs 10 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.
PAGE 5
FDME905PT P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C4 5 www.fairchildsemi.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.