Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMQ8203, MOSFET

FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench

MOSFET

FDMQ8203 Rev.C1

www.fairchildsemi.com

December 2011

MLP 4.5x5

Top

Bottom

Q1 (Nch)Q4 (Nch)

Q3 (Pch)

Q2 (Pch)

D1,D2 to backside

D3,D4 to backside

(isolated f rom D1,D2)

Pin 1

D3/

D1/

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Q1/Q4 Q2/Q3 Units

Drain to Source Voltage 100 -80 V

Gate to Source Voltage ±20 ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 6 -6

-Continuous (Silicon limited) T

= 25 °C 10 -10

-Continuous T

= 25 °C (Note 1a) 3.4 -2.6

-Pulsed 12 -10

Power Dissipation for Single Operation T

= 25 °C 22 37

Power Dissipation for Dual Operation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 160

Device Marking Device Package Reel Size Tape Width Quantity

FDMQ8203 FDMQ8203 MLP4.5x5 13 ” 12 mm 3000 units

FDMQ8203

GreenBridge

Series of High-Efficiency Bridge Rectifiers

Dual N-Channel and Dual P-Channel PowerTrench

MOSFET

N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ

Features

Q1/Q4: N-Channel

 Max r

DS(on)

= 110 mΩ at V

= 10 V, I

= 3 A

 Max r

DS(on)

= 175 mΩ at V

= 6 V, I

= 2.4 A

Q2/Q3: P-Channel

 Max r

DS(on)

= 190 mΩ at V

= -10 V, I

= -2.3 A

 Max r

DS(on)

= 235 mΩ at V

= -4.5 V, I

= -2.1 A

 Substantial efficiency benefit in PD solutions

 RoHS Compliant

General Description

This quad mosfet solution provides ten-fold improvement in

power dissipation over diode bridge.

Application

 High-Efficiency Bridge Rectifiers

Summary of content (10 pages)

PAGE 1
FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench® MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.
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Symbol Parameter Test Conditions Type Min 100 -80 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ID = -250 μA, VGS = 0 V Q1/Q4 Q2/Q3 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C ID = -250 μA, referenced to 25 °C Q1/Q4 Q2/Q3 IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V VDS = -64 V, VGS = 0 V Q1/Q4 Q2/Q3 1 -1 μA μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V Q1/Q4 Q2
PAGE 3
Symbol Parameter Test Conditions Type Min Typ Max Units 0.86 -0.82 1.3 -1.3 V Q1/Q4 Q2/Q3 32 26 52 42 ns Q1/Q4 Q2/Q3 21 26 34 42 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3 A VGS = 0 V, IS = -2.3 A (Note 2) Q1/Q4 (Note 2) Q2/Q3 Q1/Q4: IF = 3 A, di/dt = 100 A/μs Q2/Q3: IF = -2.
PAGE 4
5 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 6 V 3 2 VGS = 7 V 1 VGS = 8 V 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 400 ID = 3 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 5
1000 ID = 3 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 100 Ciss Coss 10 2 f = 1 MHz VGS = 0 V 0 0 0.5 1.0 1.5 2.0 2.5 1 0.1 3.0 Crss 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage Figure 10. ID, DRAIN CURRENT (A) 20 10 1 ms 1 10 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s o 0.01 0.005 0.
PAGE 6
25 oC unlenss otherwise noted 4 VGS = -10 V VGS = -4.5 V 8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 10 VGS = -3.5 V 6 VGS = -3 V 4 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2 VGS = -2.5 V 0 0 1 2 3 4 VGS = -2.5 V VGS = -3 V 3 VGS = -3.5 V 2 VGS = -4.5 V 1 VGS = -10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 5 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. On-Region Characteristics Figure 11.
PAGE 7
25 oC unlenss otherwise noted 1000 ID = -2.3 A Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -10 V 6 VDD = -8 V VDD = -12 V 4 100 Coss 2 f = 1 MHz VGS = 0 V 0 0 2 4 6 8 10 12 10 0.1 14 Crss 1 10 100 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 17. Capacitance vs Drain to Source Voltage Figure 16. Gate Charge Characteristics -ID, DRAIN CURRENT (A) 20 10 1 ms 1 10 ms 0.
PAGE 8
TJ = 25 oC unlenss otherwise noted P(PK), PEAK TRANSIENT POWER (W) 2000 1000 SINGLE PULSE o RθJA = 160 C/W o TA = 25 C 100 10 1 0.1 -4 10 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 19. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 160 C/W 0.001 0.
PAGE 9
FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMQ8203 Rev.C1 9 www.fairchildsemi.
PAGE 10
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.