Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMQ8403, MOSFET

FDMQ8403 N-Channel PowerTrench

MOSFET

FDMQ8403 Rev.C2

www.fairchildsemi.com

July 2012

FDMQ8403

GreenBridge

Series of High-Efficiency Bridge Rectifiers

N-Channel PowerTrench

MOSFET

100 V, 6 A, 110 mΩ

Features

 Max r

DS(on)

= 110 mΩ at V

= 10 V, I

= 3 A

 Max r

DS(on)

= 175 mΩ at V

= 6 V, I

= 2.4 A

 Substantial efficiency benefit in PD solutions

 RoHS Compliant

General Description

This quad MOSFET solution provides ten-fold improvement in

power dissipation over diode bridge.

Application

 High-Efficiency Bridge Rectifiers

Bottom

MLP 4.5x5

Top

7S3

D3/S4

D1/D4

S1/D2

D1/D4

D3/S4

D1/D4

Pin 1

S1/

D1/D4

D3/

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 6

-Continuous (Silicon limited) T

= 25 °C 9

-Continuous T

= 25 °C (Note 1a) 3.1

-Pulsed 12

Power Dissipation T

= 25 °C 17

Power Dissipation T

= 25 °C (Note 1a) 1.9

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 65

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 135

Device Marking Device Package Reel Size Tape Width Quantity

FDMQ8403 FDMQ8403 MLP 4.5x5 13 ’’ 12 mm 3000 units

Summary of content (6 pages)

PAGE 1
FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 100 V, 6 A, 110 mΩ Features General Description This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 100 V 72 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
5 VGS = 10 V VGS = 8 V VGS = 7 V 9 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 6 V 3 2 VGS = 7 V 1 VGS = 8 V 0 3 6 9 12 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 400 ID = 3 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
1000 ID = 3 A VDD = 50 V 8 VDD = 25 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 4 100 Ciss Coss 10 2 f = 1 MHz VGS = 0 V 0 0 0.5 1.0 1.5 2.0 2.5 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 500 P(PK), PEAK TRANSIENT POWER (W) 20 10 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 0.1 Crss 1 0.1 3.0 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.01 0.005 0.
PAGE 5
FDMQ8403 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMQ8403 Rev.C2 5 www.fairchildsemi.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.