Datasheet
April 2013
©2012 Fairchild Semiconductor Corporation
FDMQ86530L Rev. C1
www.fairchildsemi.com
1
FDMQ86530L Quad N-Channel PowerTrench
®
MOSFET
FDMQ86530L
GreenBridge
TM
Series of High-Efficiency Bridge Rectifiers
N-Channel PowerTrench
®
MOSFET
60 V, 8 A, 17.5 mΩ
Features
Max r
DS(on)
= 17.5 mΩ at V
GS
= 10 V, I
D
= 8 A
Max r
DS(on)
= 23 mΩ at V
GS
= 6 V, I
D
= 7 A
Max r
DS(on)
= 25 mΩ at V
GS
= 4.5 V, I
D
= 6.5 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
General Description
This Quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Applications
Active bridge
Diode Bridge replacement in 24V & 48V AC systems
Bottom
MLP 4.5x5
Top
S2
S1/D2
G2
S2
D1/D4
G1
S3
D3/S4
G3
S3
D1/D4
G4
Pin 1
S1/
D2
D1/D4
D3/
S4
G1
D1/D4
S1/D2
G2
S2
S2 S3
S3
G3
D3/S4
D1/D4
G4
Q1 Q4
Q2
Q3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 8
A -Continuous T
A
= 25 °C (Note 1a) 8
-Pulsed 50
P
D
Power Dissipation T
C
= 25 °C 22
W
Power Dissipation T
A
= 25 °C (Note 1a) 1.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 135
Device Marking Device Package Reel Size Tape Width Quantity
FDMQ86530L FDMQ86530L MLP 4.5x5 13 ’’ 12 mm 3000 units