Datasheet

April 2013
©2012 Fairchild Semiconductor Corporation
FDMQ86530L Rev. C1
www.fairchildsemi.com
1
FDMQ86530L Quad N-Channel PowerTrench
®
MOSFET
FDMQ86530L
GreenBridge
TM
Series of High-Efficiency Bridge Rectifiers
N-Channel PowerTrench
®
MOSFET
60 V, 8 A, 17.5 mΩ
Features
Max r
DS(on)
= 17.5 mΩ at V
GS
= 10 V, I
D
= 8 A
Max r
DS(on)
= 23 mΩ at V
GS
= 6 V, I
D
= 7 A
Max r
DS(on)
= 25 mΩ at V
GS
= 4.5 V, I
D
= 6.5 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
General Description
This Quad MOSFET solution provides ten-fold improvement in
power dissipation over diode bridge.
Applications
Active bridge
Diode Bridge replacement in 24V & 48V AC systems
Bottom
MLP 4.5x5
Top
S2
S1/D2
G2
S2
D1/D4
G1
S3
D3/S4
G3
S3
D1/D4
G4
Pin 1
S1/
D2
D1/D4
D3/
S4
G1
D1/D4
S1/D2
G2
S2
S2 S3
S3
G3
D3/S4
D1/D4
G4
Q1 Q4
Q2
Q3
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 8
A -Continuous T
A
= 25 °C (Note 1a) 8
-Pulsed 50
P
D
Power Dissipation T
C
= 25 °C 22
W
Power Dissipation T
A
= 25 °C (Note 1a) 1.9
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 65
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1b) 135
Device Marking Device Package Reel Size Tape Width Quantity
FDMQ86530L FDMQ86530L MLP 4.5x5 13 ’’ 12 mm 3000 units

Summary of content (6 pages)