Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS015N04B, MOSFET

November 2013

FDMS015N04B — N-Channel PowerTrench

MOSFET

FDMS015N04B Rev. C3

www.fairchildsemi.com

Bottom

Power 56

Top

Pin 1

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDMS015N04B Unit

DSS

Drain to Source Voltage 40 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) 100

- Continuous (T

= 25

C) (Note 1a) 31.3

Drain Current - Pulsed (Note 2) 400 A

Single Pulsed Avalanche Energy (Note 3) 526 mJ

Power Dissipation

= 25

C) 104 W

= 25

C) (Note 1a) 2.5 W

, T

STG

Operating and Storage Temperature Range -55 to +150

Symbol Parameter

FDMS015N04B

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. (Note 1a) 50

FDMS015N04B

N-Channel PowerTrench

MOSFET

40 V, 100 A, 1.5 mΩ

Features

•R

DS(on)

= 1.13 mΩ (Typ.) @ V

= 10 V, I

= 50 A

• Advanced Package and Silicon Combination for Low R

DS(on)

and High Efficiency

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench

process that has

been tailored to minimize the on-state resistance while main-

taining superior switching performance.

Applications

• Synchronous Rectification for ATX / Server

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

Summary of content (9 pages)

PAGE 1
FDMS015N04B N-Channel PowerTrench® MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS(on) = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking FDMS015N04B Device FDMS015N04B Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 400 *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 1 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3.0 3.5 4.0 4.5 5.0 5.5 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 400 1.2 VGS = 10V 1.1 VGS = 20V 1.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.7 1.6 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 o 120 TJ, Junction Temperature [ C] 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 50A 0.8 0.6 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10.
PAGE 5
FDMS015N04B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Thermal Response, ZθJA(t) Thermal Response [Normalized] [ZθJA] (Normalized) Figure 13. Transient Thermal Response Curve 2 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 o 1. ZθJA(t) = 125 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 0.01 Single pulse 0.005 0.01 t2 *Notes: 0.02 0.
PAGE 6
FDMS015N04B — N-Channel PowerTrench® MOSFET Figure 14. Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor Corporation FDMS015N04B Rev. C3 6 www.fairchildsemi.
PAGE 7
FDMS015N04B — N-Channel PowerTrench® MOSFET Figure 17.
PAGE 8
FDMS015N04B — N-Channel PowerTrench® MOSFET Mechnical Dimensions Figure 18. 8LD, PQFN, JEDEC MO-240 AA, 5.0X6.0MM Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.