Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS030N06B, MOSFET

November 2013

FDMS030N06B — N-Channel PowerTrench

MOSFET

FDMS030N06B Rev. C1

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDMS030N06B Unit

DSS

Drain to Source Voltage 60 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) (Note1) 100

- Continuous (T

= 25

C) (Note 2a) 22.1

Drain Current - Pulsed (Note 3) 400 A

Single Pulsed Avalanche Energy (Note 4) 248 mJ

Power Dissipation

= 25

C) 104 W

= 25

C) (Note 2a) 2.5 W

, T

STG

Operating and Storage Temperature Range -55 to +150

Symbol Parameter

FDMS030N06B

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. (Note 2a) 50

FDMS030N06B

N-Channel PowerTrench

MOSFET

60 V, 100 A, 3 mΩ

Features

•R

DS(on)

= 2.4 mΩ (Typ.) @ V

= 10 V, I

= 50 A

• Advanced Package and Silicon Combination for Low R

DS(on)

and High Efficiency

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench

process that has

been tailored to minimize the on-state resistance while main-

taining superior switching performance.

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor drives and Uninterruptible Power Supplies

• Renewable system

Bottom

Power 56

Top

Pin 1

Summary of content (10 pages)

PAGE 1
FDMS030N06B N-Channel PowerTrench® MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking FDMS030N06B Device FDMS030N06B Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 60 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 10 1 0.05 ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V *Notes: 6.0V 1. 250μs Pulse Test 5.5V o 2. TC = 25 C 5.0V 0.1 1 VDS, Drain-Source Voltage[V] o 10 1 3 4 5 6 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 3.0 VGS = 10V 2.5 2.0 VGS = 20V 1.5 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 1.0 2.
PAGE 4
Figure 8. On-Resistance Variation vs. Temperature 1.06 1.8 1.04 1.6 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.02 1.00 0.98 *Notes: 1. VGS = 0V 2. ID = 250μA 0.96 0.94 -80 -40 0 40 80 o 120 TJ, Junction Temperature [ C] 1.4 1.2 1.0 0.6 -80 160 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 50A 0.
PAGE 5
FDMS030N06B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve 2 Normalized Thermal Thermal Response, ZθJA(t) (Normalized) Impedance [ZθJA] 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 t2 *Notes: Single pulse o 0.001 1E-3 0.01 1. ZθJA(t) = 125 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.
PAGE 6
FDMS030N06B — N-Channel PowerTrench® MOSFET Figure 14. Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FDMS030N06B Rev. C1 6 www.fairchildsemi.
PAGE 7
FDMS030N06B — N-Channel PowerTrench® MOSFET Figure 17.
PAGE 8
VCC Driver VGS ( Driver) VGS (DUT) VDD VRG RG t 10V t DUT Qsync = VGS ©2010 Fairchild Semiconductor Corporation FDMS030N06B Rev. C1 8 1 ⋅ VR ( t ) dt RG  G www.fairchildsemi.com FDMS030N06B — N-Channel PowerTrench® MOSFET Figure 18. Total Gate Charge Qsync.
PAGE 9
FDMS030N06B — N-Channel PowerTrench® MOSFET Mechnical Dimensions Figure 19. 8LD, PQFN, JEDEC MO-240 AA, 5.0X6.0MM Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.