Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS0312S, MOSFET

FDMS0312S N-Channel PowerTrench

SyncFET

FDMS0312S Rev.D

www.fairchildsemi.com

July 2011

FDMS0312S

N-Channel PowerTrench

SyncFET



30 V, 42 A, 4.9 m:

Features

 Max r

DS(on)

= 4.9 m: at V

= 10 V, I

= 18 A

 Max r

DS(on)

= 5.8 m: at V

= 4.5 V, I

= 14 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 SyncFET Schottky Body Diode

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

The FDMS0312S has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

DS(on)

while maintaining excellent switching performance. This

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Notebook Vcore/ GPU low side switch

 Networking Point of Load low side switch

 Desktop

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 42

-Continuous (Silicon limited) T

= 25 °C 83

-Continuous T

= 25 °C (Note 1a) 19

-Pulsed 90

Single Pulse Avalanche Energy (Note 3) 60 mJ

Power Dissipation T

= 25 °C 46

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 2.7

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS0312S FDMS0312S Power 56 3 ’’ 12 mm 3000 units

Power 56

Pin 1

Bottom

Top

Summary of content (8 pages)

PAGE 1
FDMS0312S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4.9 m: Features General Description Max rDS(on) = 4.9 m: at VGS = 10 V, ID = 18 A The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 5.8 m: at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 PA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.
PAGE 3
PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 10 V 60 VGS = 4.5 V VGS = 3.5 V VGS = 4 V 30 VGS = 3 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 90 VGS = 3 V 10 VGS = 3.5 V 6 VGS = 10 V 4 VGS = 4 V 0 2.0 0 30 60 90 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.
PAGE 4
3000 ID = 18 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 1000 Coss 2 100 50 0.1 0 0 5 10 15 20 25 30 35 Figure 7. Gate Charge Characteristics 30 90 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC TJ = 125 1 0.01 0.1 60 VGS = 10 V 30 VGS = 4.5 V Limited by Package oC o RTJC = 2.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS0312S Rev.
PAGE 6
SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0312S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
PAGE 7
FDMS0312S N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout FDMS0312S Rev.D 7 www.fairchildsemi.
PAGE 8
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.