Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS039N08B, MOSFET

November 2013

FDMS039N08B — N-Channel PowerTrench

MOSFET

FDMS039N08B Rev. C4

www.fairchildsemi.com

Bottom

Power 56

Top

Pin 1

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDMS039N08B Unit

DSS

Drain to Source Voltage 80 V

GSS

Gate to Source Voltage ±20 V

Drain Current

- Continuous (T

= 25

C) 100

- Continuous (T

= 25

C) (Note 1a) 19.4

Drain Current - Pulsed (Note 2) 400 A

Single Pulsed Avalanche Energy (Note 3) 240 mJ

Power Dissipation

= 25

C) 104 W

= 25

C) (Note 1a) 2.5 W

, T

STG

Operating and Storage Temperature Range -55 to +150

Symbol Parameter

FDMS039N08B

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. (Note 1a) 50

FDMS039N08B

N-Channel PowerTrench

MOSFET

80 V, 100 A, 3.9 mΩ

Features

•R

DS(on)

= 3.2 mΩ (Typ.) @ V

= 10 V, I

= 50 A

• Low FOM R

DS(on) *

• Low Reverse Recovery Charge, Q

rr =

80 nC

• Soft Reverse Recovery Body Diode

• Enables Highly Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advance PowerTrench

process that has been tailored

to minimize the on-state resistance while maintaining superior

switching performance.

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor drives and Uninterruptible Power Supplies

Summary of content (9 pages)

PAGE 1
FDMS039N08B N-Channel PowerTrench® MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking FDMS039N08B Device FDMS039N08B Package Power 56 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 80 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 10 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.1 ID, Drain Current[A] ID, Drain Current[A] 100 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 1 VDS, Drain-Source Voltage[V] o 25 C 10 o -55 C 1 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o 150 C 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 *Notes: 1. VGS = 0V 2. ID = 250μA 0.96 0.94 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.6 1.4 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 50A 0.8 0.6 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10.
PAGE 5
FDMS039N08B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve 2 Thermal Response, ZθJA(t) Thermal Response [ZθJA] (Normalized) 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 *Notes: t2 o 1. ZθJA(t) = 125 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -3 10 ©2011 Fairchild Semiconductor Corporation FDMS039N08B Rev.
PAGE 6
FDMS039N08B — N-Channel PowerTrench® MOSFET Figure 14. Gate Charge Test Circuit & Waveform IG = const. Figure 15. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT VGS 10V 90% 10% td(on) tr t on td(off) tf t off Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2011 Fairchild Semiconductor Corporation FDMS039N08B Rev. C4 6 www.fairchildsemi.
PAGE 7
FDMS039N08B — N-Channel PowerTrench® MOSFET Figure 17.
PAGE 8
FDMS039N08B — N-Channel PowerTrench® MOSFET Mechnical Dimensions Figure 18. 8LD, PQFN, JEDEC MO-240 AA, 5.0X6.0MM Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.