Datasheet

FDMS039N08B — N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMS039N08B Rev. C4
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Unclamped Inductive Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
-100 -50 0 50 100 150 200
0.94
0.96
1.00
1.04
1.08
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
*Notes:
1. V
GS
= 10V
2. I
D
= 50A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
20
40
60
80
100
120
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
V
GS
=10V
R
θJC
=1.2
o
C/W
0.1 1 10 100
0.01
0.1
1
10
100
1000
100ms
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
0 1020304050607080
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
OSS
, [μJ]
V
DS
, Drain to Source Voltage [V]
0.01 0.1 1 10 100 1000
1
10
100
If R = 0
t
AV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
t
AV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)