Datasheet

December 2012
FDMS2572 N-Channel UltraFET Trench
®
MOSFET
©2012 Fairchild Semiconductor Corporation
FDMS2572 Rev.C4
www.fairchildsemi.com
1
FDMS2572
N-Channel UltraFET Trench
®
MOSFET
150V, 27A, 47mΩ
Features
 Max r
DS(on)
= 47mΩ at V
GS
= 10V, I
D
= 4.5A
 Max r
DS(on)
= 53mΩ at V
GS
= 6V, I
D
= 4.5A
 Low Miller Charge
 Optimized efficiency at high frequencies
 UIS Capability (Single pulse and Repetitive pulse)
 RoHS Compliant
General Description
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r
DS(on)
, low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
 Distributed Power Architectures and VRMs
 Primary Switch for 24V and 48V Systems
 High Voltage Synchronous Rectifier
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 27
A
-Continuous (Silicon limited) T
C
= 25°C 27
-Continuous T
A
= 25°C (Note 1a) 4.5
-Pulsed 30
E
AS
Single Pulse Avalanche Energy (Note 3) 150 mJ
P
D
Power Dissipation T
C
= 25°C 78
W
Power Dissipation T
A
= 25°C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS2572 FDMS2572 Power 56 13’’ 12mm 3000 units
G
S
S
S
Pin 1
Power 56 (Bottom view)
D
D
D
D
4
3
2
1
5
6
7
8
G
S
S
S
D
D
D
D