Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS2734, MOSFET

March 2011

FDMS2734 N-Channel UltraFET Trench

MOSFET

FDMS2734 Rev.C1

www.fairchildsemi.com

FDMS2734

N-Channel UltraFET Trench

MOSFET

250V, 14A, 122m:

Features

 Max r

DS(on)

= 122m: at V

= 10V, I

= 2.8A

 Max r

DS(on)

= 130m: at V

= 6V, I

= 1.7A

 Low Miller Charge

 Optimized efficiency at high frequencies

 RoHS Compliant

General Description

UItraFET devices combine characteristics that enable

benchmark efficiency in power conversion applications.

Optimized for r

DS(on)

, low ESR, low total and Miller gate charge,

these devices are ideal for high frequency DC to DC converters.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 250 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Silicon limited) T

= 25°C 14

A -Continuous T

= 25°C (Note 1a) 2.8

-Pulsed 30

Power Dissipation T

= 25°C 78

Power Dissipation T

= 25°C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 1.6

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS2734 FDMS2734 Power 56 13’’ 12mm 3000 units

Pin 1

Power 56 (Bottom view)

Summary of content (7 pages)

PAGE 1
FDMS2734 N-Channel UltraFET Trench® MOSFET 250V, 14A, 122m: Features General Description Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A Low Miller Charge UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Optimized efficiency at high frequencies Application Max rDS(on) = 130m: at VGS = 6V, ID = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 250 ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 200V, IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V V 250 mV/°C 1 PA ±100 nA 4 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source
PAGE 3
2.2 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 25 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 VGS = 6V VGS = 10V 20 VGS = 5V 15 10 VGS = 4.5V 5 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 VGS = 5V VGS = 6V 1.4 1.2 VGS = 10V 1.0 0.8 0 5 5 10 15 20 ID, DRAIN CURRENT(A) 25 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 400 2.4 2.2 ID = 2.8A VGS = 10V 2.
PAGE 4
3000 8 1000 VDD =75V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 125V 6 VDD = 175V 4 2 Ciss Coss 100 10 0.1 0 0 8 16 24 Qg, GATE CHARGE(nC) 32 Figure 7. Gate Charge Characteristics 4 15 3 12 2 TJ = 125oC TJ 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 8. Capacitance vs Drain to Source Voltage ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) Crss f = 1MHz VGS = 0V = 25oC VGS = 10V 9 VGS = 6V 6 3 o RTJC = 1.6 C/W 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1E-3 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 1E-4 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS2734 Rev.C1 5 www.fairchildsemi.
PAGE 6
FDMS2734 N-Channel UltraFET Trench® MOSFET www.fairchildsemi.com 6 FDMS2734 Rev.
PAGE 7
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.