Datasheet

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7
©2012 Fairchild Semiconductor Corporation
FDMS3008SDC Rev.C4
FDMS3008SDC N-Channel Dual Cool
TM
PowerTrench
®
SyncFET
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS3008SDC.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
0 5 10 15 20 25
0.000001
0.00001
0.0001
0.001
0.01
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 14. FDMS3008SDC SyncFET body
diode reverse recovery characteristic
0 50 100 150 200 250 300
-5
0
5
10
15
20
25
30
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)